Invention Grant
- Patent Title: Backside structure and method for BSI image sensors
- Patent Title (中): BSI图像传感器的背面结构和方法
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Application No.: US14609066Application Date: 2015-01-29
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Publication No.: US09305966B2Publication Date: 2016-04-05
- Inventor: Chun-Chieh Chuang , Dun-Nian Yaung , Jen-Cheng Liu , Wen-De Wang , Keng-Yu Chou , Shuang-Ji Tsai , Min-Feng Kao
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/146 ; H01L31/0216 ; H01L31/18

Abstract:
BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.
Public/Granted literature
- US20150140722A1 Backside Structure and Method for BSI Image Sensors Public/Granted day:2015-05-21
Information query
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