Invention Grant
- Patent Title: 3 dimensional semiconductor device having a lateral channel
- Patent Title (中): 具有侧向通道的三维半导体器件
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Application No.: US14556817Application Date: 2014-12-01
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Publication No.: US09305975B2Publication Date: 2016-04-05
- Inventor: Suk Ki Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2013-0064578 20130605
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L27/24 ; H01L29/66 ; H01L21/467 ; H01L45/00 ; H01L29/161 ; H01L29/417 ; H01L29/423 ; H01L29/78 ; H01L29/08 ; H01L29/165

Abstract:
A 3D semiconductor device and a method of manufacturing the same are provided. The method includes forming a first semiconductor layer including a common source node on a semiconductor substrate, forming a transistor region on the first semiconductor layer, wherein the transistor region includes a horizontal channel region substantially parallel to a surface of the semiconductor substrate, and source and drain regions branched from the horizontal channel region to a direction substantially perpendicular to the surface of the semiconductor substrate, processing the first semiconductor layer to locate the common source node corresponding to the source region, forming a gate in a space between the source region and the drain region, forming heating electrodes on the source region and the drain region, and forming resistance variable material layers on the exposed heating electrodes.
Public/Granted literature
- US20150129828A1 3 DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-05-14
Information query
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