Method of manufacturing semiconductor structure

Invention Grant

US09305993B2 Method of manufacturing semiconductor structure 有权

Title translation: 制造半导体结构的方法

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Patent Title: Method of manufacturing semiconductor structure
Patent Title (中): 制造半导体结构的方法
Application No.: US14591622

Application Date: 2015-01-07
Publication No.: US09305993B2

Publication Date: 2016-04-05
Inventor: Chen-Yuan Lin , Ching-Lin Chan , Cheng-Chi Lin , Shih-Chin Lien
Applicant: MACRONIX International Co., Ltd.
Applicant Address: TW Hsinchu
Assignee: MACRONIX International Co., Ltd.
Current Assignee: MACRONIX International Co., Ltd.
Current Assignee Address: TW Hsinchu
Agency: J.C. Patents
Main IPC: H01L21/8238
IPC: H01L21/8238 ; H01L49/02 ; G05F3/02 ; H01L27/06 ; H01L29/66

Method of manufacturing semiconductor structure

Abstract:

A method of manufacturing a semiconductor structure with a high voltage area and a low voltage area is provided. The method includes the following steps: providing a substrate of a first conductivity type; forming a second doped region of a second conductivity type in the substrate by a first implantation; forming a first doped region of a first conductivity type in the second doped region by a second implantation; forming an insulating layer on the substrate; forming a resistor on the insulating layer, wherein the resistor is electrically connecting the high voltage area and the low voltage area; and forming a conductor electrically connected to the resistor. The step of forming a first doped region defines the high voltage area and the low voltage area.

Abstract(Chinese):

提供一种制造具有高电压面积和低电压面积的半导体结构的方法。该方法包括以下步骤：提供第一导电类型的衬底; 通过第一注入在衬底中形成第二导电类型的第二掺杂区; 通过第二注入在所述第二掺杂区中形成第一导电类型的第一掺杂区; 在所述基板上形成绝缘层; 在所述绝缘层上形成电阻器，其中所述电阻器电连接所述高电压区域和所述低电压区域; 并形成电连接到电阻器的导体。形成第一掺杂区域的步骤限定高电压区域和低电压区域。

Public/Granted literature

US20150118820A1 METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE Public/Granted day:2015-04-30

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS