Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14396709Application Date: 2014-08-15
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Publication No.: US09306003B2Publication Date: 2016-04-05
- Inventor: Jing Xu , Jiang Yan , Bangming Chen , Hongli Wang , Bo Tang , Zhaoyun Tang , Yefeng Xu , Chunlong Li , Mengmeng Yang
- Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Applicant Address: CN Beijing
- Assignee: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Current Assignee: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Current Assignee Address: CN Beijing
- Agency: Christensen Fonder P.A.
- Priority: CN201410339812 20140716
- International Application: PCT/CN2014/084514 WO 20140815
- International Announcement: WO2016/008195 WO 20160121
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/165 ; H01L29/78 ; H01L29/66 ; H01L21/02 ; H01L21/306
Abstract:
A semiconductor device, including: a substrate having a first semiconductor material; a second semiconductor layer on the substrate; a third semiconductor layer on the second semiconductor layer and being a device formation region; an isolation structure on both sides of the third semiconductor layer and on the substrate; and an insulating layer below the source and drain regions of the third semiconductor layer and between the isolation structure and the ends of the second semiconductor layer.
Public/Granted literature
- US20160020274A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2016-01-21
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