Invention Grant
- Patent Title: Mix doping of a semi-insulating Group III nitride
- Patent Title (中): 混合掺杂半绝缘III族氮化物
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Application No.: US13775661Application Date: 2013-02-25
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Publication No.: US09306009B2Publication Date: 2016-04-05
- Inventor: Christer Hallin , Saptharishi Sriram
- Applicant: Cree, Inc.
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel & Sibley, P.A.
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/20 ; H01L21/02 ; H01L29/66 ; H01L29/207 ; H01L29/778
Abstract:
Embodiments of a semi-insulating Group III nitride and methods of fabrication thereof are disclosed. In one embodiment, a semi-insulating Group III nitride layer includes a first doped portion that is doped with a first dopant and a second doped portion that is doped with a second dopant that is different than the first dopant. The first doped portion extends to a first thickness of the semi-insulating Group III nitride layer. The second doped portion extends from approximately the first thickness of the semi-insulating Group III nitride layer to a second thickness of the semi-insulating Group III nitride layer. In one embodiment, the first dopant is Iron (Fe), and the second dopant is Carbon (C). In another embodiment, the semi-insulating Group III nitride layer is a semi-insulating Gallium Nitride (GaN) layer, the first dopant is Fe, and the second dopant is C.
Public/Granted literature
- US20140239308A1 MIX DOPING OF A SEMI-INSULATING GROUP III NITRIDE Public/Granted day:2014-08-28
Information query
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