Invention Grant
- Patent Title: Strip-ground field plate
- Patent Title (中): 带状地面场板
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Application No.: US13862020Application Date: 2013-04-12
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Publication No.: US09306012B2Publication Date: 2016-04-05
- Inventor: Ru-Yi Su , Po-Chih Chen , Ming-Cheng Lin , Fu-Chih Yang , Chun Lin Tsai
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsin-Chu
- Agency: Cooper Legal Group, LLC
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L29/66 ; H01L29/812 ; H01L29/20
Abstract:
Among other things, one or more semiconductor devices and techniques for forming such semiconductor devices are provided. The semiconductor device comprises a strip-ground field plate. The strip-ground field plate is connected to a source region of the semiconductor device and/or a ground plane. The strip-ground field plate provides a release path for a gate edge electric field. The release path directs an electrical field away from a gate region of the semiconductor device. In this way, breakdown voltage and gate charge are improved.
Public/Granted literature
- US20140264637A1 STRIP-GROUND FIELD PLATE Public/Granted day:2014-09-18
Information query
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