Invention Grant
- Patent Title: Bipolar transistor with carbon alloyed contacts
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Application No.: US14182930Application Date: 2014-02-18
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Publication No.: US09306042B2Publication Date: 2016-04-05
- Inventor: Kevin K. Chan , Bahman Hekmatshoartabari , Tak H. Ning
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: H01L29/732
- IPC: H01L29/732 ; H01L29/66 ; H01L29/08 ; H01L29/167 ; H01L29/10
Abstract:
A method for forming a bipolar junction transistor includes forming a collector intrinsic region, an emitter intrinsic region and an intrinsic base region between the collector intrinsic region and the emitter intrinsic region. A collector extrinsic contact region is formed in direct contact with the collector intrinsic region; an emitter extrinsic contact region is formed on the emitter intrinsic region and a base extrinsic contact region is formed in direct contact with the intrinsic base region. Carbon is introduced into at least one of the collector extrinsic contact region, the emitter extrinsic contact region and the base extrinsic contact region to suppress diffusion of dopants into the junction region.
Public/Granted literature
- US20150236093A1 BIPOLAR TRANSISTOR WITH CARBON ALLOYED CONTACTS Public/Granted day:2015-08-20
Information query
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