A bipolar junction transistor and an operating method and a manufacturing method for the same are provided. The bipolar junction transistor comprises a first doped region, a second doped region and a third doped region. The first doped region has a first type conductivity. The second doped region comprises well regions formed in the first doped region, having a second type conductivity opposite to the first type conductivity, and separated from each other by the first doped region. The third doped region has the first type conductivity. The third doped region is formed in the well regions or in the first doped region between the well regions.