Invention Grant
- Patent Title: Semiconductor device having a semiconductor element and a terminal connected to the semiconductor element
- Patent Title (中): 具有半导体元件的半导体器件和与半导体元件连接的端子
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Application No.: US14359042Application Date: 2012-02-22
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Publication No.: US09306046B2Publication Date: 2016-04-05
- Inventor: Shigeo Toi
- Applicant: Shigeo Toi
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2012/054294 WO 20120222
- International Announcement: WO2013/124989 WO 20130829
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L23/492 ; H01L23/498 ; H01L23/00 ; H01L29/06 ; H01L25/07 ; H01L25/18 ; H01L23/488 ; H01L29/10 ; H01L29/16 ; H01L29/20 ; H01L29/417
Abstract:
A semiconductor device includes a semiconductor element with a plurality of gates, an emitter pattern insulated from the plurality of gates and an emitter electrode formed on the emitter pattern, the semiconductor element being formed such that a main current flows into the emitter electrode via the emitter pattern, a first solder formed on a part of the emitter electrode, a second solder formed on a part of the emitter electrode apart from the first solder, and a terminal connected to the emitter electrode by means of the first solder and the second solder, wherein the semiconductor element includes a first solder region, a second solder region and an intermediate region, a density of the gates in each of the solder regions are equal, and a current density of the main current in the intermediate region is lower than current densities of the main currents in the other solder regions.
Public/Granted literature
- US20150303287A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-10-22
Information query
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