Invention Grant
US09306050B2 III-V semiconductor structures including aluminum-silicon nitride passivation
有权
包括铝 - 氮化硅钝化的III-V半导体结构
- Patent Title: III-V semiconductor structures including aluminum-silicon nitride passivation
- Patent Title (中): 包括铝 - 氮化硅钝化的III-V半导体结构
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Application No.: US13380104Application Date: 2010-06-28
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Publication No.: US09306050B2Publication Date: 2016-04-05
- Inventor: James R. Shealy , Richard Brown
- Applicant: James R. Shealy , Richard Brown
- Applicant Address: US NY Ithaca
- Assignee: CORNELL UNIVERSITY
- Current Assignee: CORNELL UNIVERSITY
- Current Assignee Address: US NY Ithaca
- Agency: Bond, Schoeneck & King, PLLC
- Agent William Greener; Alek P. Szecsy
- International Application: PCT/US2010/040129 WO 20100628
- International Announcement: WO2010/151855 WO 20101229
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L23/29 ; H01L23/31 ; H01L29/423 ; H01L29/66 ; H01L29/20
Abstract:
A semiconductor structure includes a semiconductor layer that is passivated with an aluminum-silicon nitride layer. When the semiconductor layer in particular comprises a III-V semiconductor material such as a group III nitride semiconductor material or a gallium nitride semiconductor material, the aluminum-silicon nitride material provides a superior passivation in comparison with a silicon nitride material.
Public/Granted literature
- US20120153301A1 III-V SEMICONDUCTOR STRUCTURES INCLUDING ALUMINUM-SILICON NITRIDE PASSIVATION Public/Granted day:2012-06-21
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