Invention Grant
- Patent Title: Compound semiconductor device and method of manufacturing the same
- Patent Title (中): 化合物半导体器件及其制造方法
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Application No.: US14671375Application Date: 2015-03-27
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Publication No.: US09306052B2Publication Date: 2016-04-05
- Inventor: Shirou Ozaki , Naoya Okamoto
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Fujitsu Patent Center
- Priority: JP2014-082813 20140414
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L21/02 ; H01L29/66 ; H01L21/268 ; H01L23/31 ; H01L23/532 ; H01L23/482 ; H01L29/20
Abstract:
A compound semiconductor device includes: an electron transit layer; an electron supply layer over the electron transit layer; a gate electrode, a source electrode and a drain electrode at a level above the electron supply layer; and a porous electrical insulating film that covers the gate electrode, the source electrode and the drain electrode, the porous electrical insulating film containing an organic constituent, and a cavity being formed around the gate electrode in the porous electrical insulating film. A cross-linking layer is on a surface of the porous electrical insulating film at the cavity side.
Public/Granted literature
- US20150295074A1 COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-10-15
Information query
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