Invention Grant
- Patent Title: Field effect transistor devices with protective regions
- Patent Title (中): 具有保护区域的场效应晶体管器件
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Application No.: US13799049Application Date: 2013-03-13
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Publication No.: US09306061B2Publication Date: 2016-04-05
- Inventor: Lin Cheng , Anant Agarwal , Vipindas Pala , John Palmour
- Applicant: Cree, Inc.
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel & Sibley, P.A.
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L29/78 ; H01L29/66 ; H01L29/739 ; H01L29/16
Abstract:
A transistor device includes a first conductivity type drift layer, a second conductivity type first region in the drift layer, a body layer having the second conductivity type on the drift layer including the first region, a source layer on the body layer, and a body contact region that extends through the source layer and the body layer and into the first region. The transistor device further includes a trench through the source layer and the body layer and extending into the drift layer adjacent the first region. The trench has an inner sidewall facing away from the first region. A gate insulator is on the inner sidewall of the trench, and a gate contact is on the gate insulator.
Public/Granted literature
- US20140264563A1 Field Effect Transistor Devices with Protective Regions Public/Granted day:2014-09-18
Information query
IPC分类:
