Invention Grant
US09306087B2 Method for manufacturing a photovoltaic cell with a locally diffused rear side
有权
具有局部扩散后侧的太阳能电池的制造方法
- Patent Title: Method for manufacturing a photovoltaic cell with a locally diffused rear side
- Patent Title (中): 具有局部扩散后侧的太阳能电池的制造方法
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Application No.: US13602919Application Date: 2012-09-04
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Publication No.: US09306087B2Publication Date: 2016-04-05
- Inventor: Giuseppe Scardera , Maxim Kelman , Elena V Rogojina , Dmitry Poplavskyy , Elizabeth Tai , Gonghou Wang
- Applicant: Giuseppe Scardera , Maxim Kelman , Elena V Rogojina , Dmitry Poplavskyy , Elizabeth Tai , Gonghou Wang
- Applicant Address: US DE Wilmington
- Assignee: E I DU PONT DE NEMOURS AND COMPANY
- Current Assignee: E I DU PONT DE NEMOURS AND COMPANY
- Current Assignee Address: US DE Wilmington
- Main IPC: H01L21/22
- IPC: H01L21/22 ; H01L21/368 ; H01L21/208 ; H01L31/0224 ; H01L31/068 ; H01L31/18

Abstract:
A method for manufacturing a photovoltaic cell with a locally diffused rear side, comprising steps of: (a) providing a doped silicon substrate, the substrate comprising a front, sunward facing, surface and a rear surface; (b) forming a silicon dioxide layer on the front surface and the rear surface; (c) depositing a boron-containing doping paste on the rear surface in a pattern, the boron-containing paste comprising a boron compound and a solvent; (d) depositing a phosphorus-containing doping paste on the rear surface in a pattern, the phosphorus-containing doping paste comprising a phosphorus compound and a solvent; (e) heating the silicon substrate in an ambient to a first temperature and for a first time period in order to locally diffuse boron and phosphorus into the rear surface of the silicon substrate.
Public/Granted literature
- US20140065764A1 METHOD FOR MANUFACTURING A PHOTOVOLTAIC CELL WITH A LOCALLY DIFFUSED REAR SIDE Public/Granted day:2014-03-06
Information query
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