Invention Grant
- Patent Title: Chalcopyrite-type semiconductor photovoltaic device
- Patent Title (中): 黄铜矿型半导体光伏器件
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Application No.: US13821009Application Date: 2011-09-06
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Publication No.: US09306093B2Publication Date: 2016-04-05
- Inventor: Brian W. Baird , Timothy D. Gerke
- Applicant: Brian W. Baird , Timothy D. Gerke
- Applicant Address: GB Southampton
- Assignee: Fianium Ltd.
- Current Assignee: Fianium Ltd.
- Current Assignee Address: GB Southampton
- Agent Peter Rainville
- Priority: GB1014778.3 20100906
- International Application: PCT/EP2011/065416 WO 20110906
- International Announcement: WO2012/032064 WO 20120315
- Main IPC: H01L31/0352
- IPC: H01L31/0352 ; H01L31/0236 ; B23K26/073 ; H01L21/268 ; H01L31/073 ; H01L31/0749 ; H01L21/78 ; H01L31/18 ; H01L31/046 ; H01L31/0463 ; B23K26/40

Abstract:
A scribed photovoltaic device, comprising a photovoltaic device configured for generating electrical energy responsive to receiving solar radiation, the photovoltaic device comprising a plurality of electrically connected photovoltaic sections comprising a photovoltaic light absorbing chalcopyrite semiconductor region (“PLACS region”) disposed between first and second electrode regions. The photovoltaic sections can each comprise a scribe channel extending along and into two of the regions, wherein the scribe channel can comprise a pair of spaced opposing sidewalls of one of the regions, a pair of terraces comprising a pair of spaced opposing terrace shoulders, and a second pair of spaced opposing sidewalls of another one of the regions, with the spacing of the second pair of sidewalls being different than the spacing of the first pair of sidewalls. The spacing of the second pair of sidewalls can be less than the spacing of the first pair of sidewalls, and another one of the regions comprises the PLACS region.
Public/Granted literature
- US20130327389A1 Chalcopyrite -Type Semiconductor Photovoltaic Device Public/Granted day:2013-12-12
Information query
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