Invention Grant
- Patent Title: Semiconductor material and method of production
- Patent Title (中): 半导体材料及生产方法
-
Application No.: US13988302Application Date: 2011-11-18
-
Publication No.: US09306111B2Publication Date: 2016-04-05
- Inventor: Dominik Berg , Alex Redinger , Phillip Dale , Susanne Siebentritt
- Applicant: Dominik Berg , Alex Redinger , Phillip Dale , Susanne Siebentritt
- Applicant Address: LU Luxembourg JP Tokyo
- Assignee: UNIVERSITE DU LUXEMBOURG,TDK CORPORATION
- Current Assignee: UNIVERSITE DU LUXEMBOURG,TDK CORPORATION
- Current Assignee Address: LU Luxembourg JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: LU91754 20101118
- International Application: PCT/EP2011/070436 WO 20111118
- International Announcement: WO2012/066116 WO 20120524
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L31/00 ; H01L31/18 ; C23C14/06 ; C23C14/58 ; C25D5/10 ; C25D5/50 ; H01L31/032
Abstract:
A method of manufacturing (AgxCu1-x)2ZnSn(SySe1-y)4 thin films, the method comprising: providing a thin film comprising Ag and/or Cu, the thin film further comprising Zn and annealing the thin film in an atmosphere comprising S and/or Se, and further comprising Sn.
Public/Granted literature
- US20130269783A1 Semiconductor Material and Method of Production Public/Granted day:2013-10-17
Information query
IPC分类:
