Invention Grant
US09306114B2 III-V compound semiconductor-based-light-emitting diode device with embedded charge carrier barrier
有权
具有嵌入式电荷载流子屏障的III-V化合物半导体基发光二极管器件
- Patent Title: III-V compound semiconductor-based-light-emitting diode device with embedded charge carrier barrier
- Patent Title (中): 具有嵌入式电荷载流子屏障的III-V化合物半导体基发光二极管器件
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Application No.: US14420197Application Date: 2013-08-08
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Publication No.: US09306114B2Publication Date: 2016-04-05
- Inventor: Ivar Tångring , Jens Ebbecke , Ines Pietzonka
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE
- Agency: DLA Piper LLP (US)
- Priority: DE102012107795 20120823
- International Application: PCT/EP2013/066656 WO 20130808
- International Announcement: WO2014/029633 WO 20140227
- Main IPC: H01L33/30
- IPC: H01L33/30 ; H01L33/60 ; H01L33/00 ; H01L33/14 ; H01L33/06

Abstract:
An optoelectronic semiconductor body includes a semiconductor layer sequence having an active region that generates radiation, a first barrier region and a second barrier region, wherein the active region is arranged between the first barrier region and the second barrier region; and at least one charge carrier barrier layer is arranged in the first barrier region, said at least one charge carrier barrier layer being tensile-strained.
Public/Granted literature
- US20150200328A1 OPTOELECTRONIC SEMICONDUCTOR BODY AND OPTOELECTRONIC SEMICONDUCTOR CHIP Public/Granted day:2015-07-16
Information query
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