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US09306114B2 III-V compound semiconductor-based-light-emitting diode device with embedded charge carrier barrier 有权
具有嵌入式电荷载流子屏障的III-V化合物半导体基发光二极管器件

III-V compound semiconductor-based-light-emitting diode device with embedded charge carrier barrier
Abstract:
An optoelectronic semiconductor body includes a semiconductor layer sequence having an active region that generates radiation, a first barrier region and a second barrier region, wherein the active region is arranged between the first barrier region and the second barrier region; and at least one charge carrier barrier layer is arranged in the first barrier region, said at least one charge carrier barrier layer being tensile-strained.
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