Invention Grant
- Patent Title: Light emitting device and method for manufacturing the same
- Patent Title (中): 发光元件及其制造方法
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Application No.: US14858241Application Date: 2015-09-18
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Publication No.: US09306132B2Publication Date: 2016-04-05
- Inventor: Keiichi Maki
- Applicant: Toshiba Hokuto Electronics Corporation
- Applicant Address: JP Asahikawa-Shi
- Assignee: Toshiba Hokuto Electronics Corporation
- Current Assignee: Toshiba Hokuto Electronics Corporation
- Current Assignee Address: JP Asahikawa-Shi
- Agency: Burr & Brown, PLLC
- Priority: JP2013-068172 20130328; JP2013-068173 20130328
- Main IPC: H01L29/18
- IPC: H01L29/18 ; H01L33/00 ; H01L33/54 ; H01L27/15 ; H01L33/62 ; H01L25/075 ; H01L23/00 ; H01L33/56

Abstract:
A light emitting device in an embodiment includes first and second light transmissive insulators and a light emitting diode arranged between them. First and second electrodes of the light emitting diode are electrically connected to a conductive circuit layer provided on a surface of at least one of the first and second light transmissive insulators. Between the first light transmissive insulator and the second light transmissive insulator, a third light transmissive insulator is embedded which has at least one of a Vicat softening temperature of 80° C. or higher and 160° C. or lower and a tensile storage elastic modulus of 0.01 GPa or more and 10 GPa or less.
Public/Granted literature
- US20160013376A1 LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2016-01-14
Information query
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