Invention Grant
- Patent Title: Semiconductor light-emitting device
- Patent Title (中): 半导体发光装置
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Application No.: US14634885Application Date: 2015-03-01
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Publication No.: US09306140B1Publication Date: 2016-04-05
- Inventor: Kyohei Shibata
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2014-186899 20140912
- Main IPC: H01L29/22
- IPC: H01L29/22 ; H01L33/62 ; H01L33/52 ; H01L33/50 ; H01L33/38 ; H01L33/48

Abstract:
A semiconductor light-emitting device includes first and second semiconductor layer and a light-emitting layer between the first and second semiconductor layers. These layers are on a conductive substrate. A first electrode and a first electrode pad, which are electrically connected to each other, are the first semiconductor layer. A second electrode is between the substrate and the second semiconductor layer. A portion of the second electrode is not covered by the first semiconductor, second semiconductor, and light-emitting layers. A second electrode pad is on the exposed portion of the second electrode. The second electrode pad has a planar area that is less than a planar area of the first electrode pad. A third electrode is on a second surface of the conductive substrate such that the conductive substrate is between the third electrode and the second electrode. The third electrode is electrically connected to the second electrode pad.
Public/Granted literature
- US20160079501A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE Public/Granted day:2016-03-17
Information query
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