Invention Grant
- Patent Title: Fabrication method of resistance variable memory apparatus
- Patent Title (中): 电阻变量存储装置的制造方法
-
Application No.: US14683945Application Date: 2015-04-10
-
Publication No.: US09306166B1Publication Date: 2016-04-05
- Inventor: Jun Kwan Kim , Young Ho Lee , Su Jin Chae
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2015-0013407 20150128
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
A fabrication method of a resistance variable memory apparatus includes forming an amorphous phase-change material layer on a semiconductor substrate in which a bottom structure is formed, and performing crystallization on the amorphous phase-change material layer through a low-temperature plasma treatment process.
Information query
IPC分类:
