Invention Grant
- Patent Title: RF front-end with on-chip transmitter/receiver isolation using a gyrator
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Application No.: US13930812Application Date: 2013-06-28
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Publication No.: US09306542B2Publication Date: 2016-04-05
- Inventor: Mohyee Mikhemar , Hooman Darabi
- Applicant: Broadcom Corporation
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: H03H11/42
- IPC: H03H11/42 ; H03H7/46 ; H04B5/00

Abstract:
An RF front-end with on-chip transmitter/receiver isolation using a gyrator is presented herein. The RF front end is configured to support full-duplex communication and includes a gyrator and a transformer. The gyrator includes two transistors that are configured to isolate the input of a low-noise amplifier (LNA) from the output of a power amplifier (PA). The gyrator is further configured to isolate the output of the PA from the input of the LNA. The gyrator is at least partially or fully capable of being integrated on silicon-based substrate.
Public/Granted literature
- US20130285764A1 RF FRONT-END WITH ON-CHIP TRANSMITTER/RECEIVER ISOLATION USING A GYRATOR Public/Granted day:2013-10-31
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