Invention Grant
- Patent Title: Field-effect transistor
- Patent Title (中): 场效应晶体管
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Application No.: US14438316Application Date: 2013-10-02
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Publication No.: US09306558B2Publication Date: 2016-04-05
- Inventor: Takamitsu Suzuki , Takahiko Andoh , Satoshi Morishita
- Applicant: SHARP KABUSHIKI KAISHA
- Applicant Address: JP Osaka
- Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee Address: JP Osaka
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2012-247770 20121109
- International Application: PCT/JP2013/076853 WO 20131002
- International Announcement: WO2014/073295 WO 20140515
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H01L29/417 ; H01L29/778 ; H01L29/20 ; H01L27/02 ; H01L27/06 ; H01L29/205 ; H01L21/8234 ; H01L27/088 ; H01L23/00
Abstract:
This FET includes: a source electrode pad, which is formed on a source electrode and which is electrically connected to the source electrode; and/or a drain electrode pad, which is formed on the drain electrode and which is electrically connected to the drain electrode. The source electrode pad has a cutout for reducing a parasitic capacitance between the source electrode pad and the drain electrode, and the drain electrode pad has a cutout for reducing a parasitic capacitance between the drain electrode pad and the source electrode.
Public/Granted literature
- US20150295573A1 FIELD-EFFECT TRANSISTOR Public/Granted day:2015-10-15
Information query
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