Invention Grant
- Patent Title: Nonvolatile memory with command-driven on-die termination
- Patent Title (中): 具有命令驱动的片上端接的非易失性存储器
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Application No.: US14711556Application Date: 2015-05-13
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Publication No.: US09306566B2Publication Date: 2016-04-05
- Inventor: Kyung Suk Oh , Ian P. Shaeffer
- Applicant: Rambus Inc.
- Applicant Address: US CA Sunnyvale
- Assignee: Rambus Inc.
- Current Assignee: Rambus Inc.
- Current Assignee Address: US CA Sunnyvale
- Agent Charles Shemwell
- Main IPC: H03K17/16
- IPC: H03K17/16 ; H03K19/00 ; G06F13/40 ; G11C11/4093 ; H03K19/0175 ; G11C11/401 ; G11C11/419 ; G11C16/26 ; G11C11/41 ; G11C11/4063 ; G11C11/413 ; G11C11/417 ; G11C16/06 ; G11C16/32
Abstract:
On-die termination circuitry within a non-volatile memory device applies a first termination resistance to an I/O node in response to a data storage command indicating that a data signal conveyed on a bidirectional signaling line is to be received within the non-volatile memory device via the I/O node, and applies a second termination resistance to the I/O node in response to information indicating that another memory device is to output a data signal onto the bidirectional signaling line.
Public/Granted literature
- US20150244365A1 NONVOLATILE MEMORY WITH COMMAND-DRIVEN ON-DIE TERMINATION Public/Granted day:2015-08-27
Information query
