Invention Grant
- Patent Title: Wiring substrate and semiconductor device
- Patent Title (中): 接线基板和半导体器件
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Application No.: US14633525Application Date: 2015-02-27
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Publication No.: US09307641B2Publication Date: 2016-04-05
- Inventor: Kiyoshi Oi , Takashi Kurihara
- Applicant: SHINKO ELECTRIC INDUSTRIES CO., LTD.
- Applicant Address: JP Nagano-shi
- Assignee: SHINKO ELECTRIC INDUSTRIES CO., LTD.
- Current Assignee: SHINKO ELECTRIC INDUSTRIES CO., LTD.
- Current Assignee Address: JP Nagano-shi
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2014-040092 20140303
- Main IPC: H01L23/12
- IPC: H01L23/12 ; H05K1/11 ; H01L23/498 ; H01L23/00 ; H01L25/065 ; H05K1/02

Abstract:
A wiring substrate includes a first multi-layer wiring layer including an insulating layer formed of a non-photosensitive resin, a plurality of external connection pads formed on an upper face side of the first multi-layer wiring layer, and a second multi-layer wiring layer formed on the first multi-layer wiring layer, the second multi-layer wiring layer including an insulating layer formed of a photosensitive resin, the second multi-layer wiring layer having a wiring pitch narrower than the wiring pitch of the first multi-layer wiring layer. The external connection pads are exposed from the insulating layer of the second multi-layer wiring layer.
Public/Granted literature
- US20150250053A1 WIRING SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE Public/Granted day:2015-09-03
Information query
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