Invention Grant
US09310296B2 Optimizing an optical parametric model for structural analysis using optical critical dimension (OCD) metrology
有权
使用光学关键尺寸（OCD）计量优化用于结构分析的光学参数模型
- Patent Title: Optimizing an optical parametric model for structural analysis using optical critical dimension (OCD) metrology
- Patent Title (中): 使用光学关键尺寸（OCD）计量优化用于结构分析的光学参数模型
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Application No.: US13164398Application Date: 2011-06-20
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Publication No.: US09310296B2Publication Date: 2016-04-12
- Inventor: Thaddeus G. Dziura , Yung-Ho Chuang , Bin-ming Benjamin Tsai , Xuefeng Liu , John J. Hench
- Applicant: Thaddeus G. Dziura , Yung-Ho Chuang , Bin-ming Benjamin Tsai , Xuefeng Liu , John J. Hench
- Applicant Address: US CA Milpitas
- Assignee: KLA-TENCOR CORPORATION
- Current Assignee: KLA-TENCOR CORPORATION
- Current Assignee Address: US CA Milpitas
- Agency: Blakely Sokoloff Taylor & Zapman
- Main IPC: G05B13/00
- IPC: G05B13/00 ; G01N21/47 ; G01B11/24 ; G03F7/20 ; G01N21/956 ; G06F17/50
Abstract:
Optimization of optical parametric models for structural analysis using optical critical dimension metrology is described. A method includes determining a first optical model fit for a parameter of a structure. The first optical model fit is based on a domain of quantities for a first model of the structure. A first near optical field response is determined for a first quantity of the domain of quantities and a second near optical field response is determined for a second, different quantity of the domain of quantities. The first and second near optical field responses are compared to locate a common region of high optical field intensity for the parameter of the structure. The first model of the structure is modified to provide a second, different model of the structure. A second, different optical model fit is determined for the parameter of the structure based on the second model of the structure.
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