Invention Grant
US09312154B2 CVD apparatus for improved film thickness non-uniformity and particle performance
有权
CVD装置用于改善膜厚不均匀性和颗粒性能
- Patent Title: CVD apparatus for improved film thickness non-uniformity and particle performance
- Patent Title (中): CVD装置用于改善膜厚不均匀性和颗粒性能
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Application No.: US12763522Application Date: 2010-04-20
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Publication No.: US09312154B2Publication Date: 2016-04-12
- Inventor: Binh Tran , Anqing Cui , Bernard L. Hwang , Son T. Nguyen , Anh N. Nguyen , Sean M. Seutter , Xianzhi Tao
- Applicant: Binh Tran , Anqing Cui , Bernard L. Hwang , Son T. Nguyen , Anh N. Nguyen , Sean M. Seutter , Xianzhi Tao
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser Taboada
- Agent Alan Taboada
- Main IPC: H01L21/67
- IPC: H01L21/67 ; C23C16/455 ; C23C16/44 ; H01L21/687
Abstract:
Embodiments of the invention provide improved apparatus for depositing layers on substrates, such as by chemical vapor deposition (CVD). The inventive apparatus disclosed herein may advantageously facilitate one or more of depositing films having reduced film thickness non-uniformity within a given process chamber, improved particle performance (e.g., reduced particles on films formed in the process chamber), chamber-to-chamber performance matching amongst a plurality of process chambers, and improved process chamber serviceability.
Public/Granted literature
- US20100294199A1 CVD APPARATUS FOR IMPROVED FILM THICKNESS NON-UNIFORMITY AND PARTICLE PERFORMANCE Public/Granted day:2010-11-25
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