Invention Grant
- Patent Title: Semiconductor device and method for making same
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Application No.: US14673707Application Date: 2015-03-30
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Publication No.: US09312172B2Publication Date: 2016-04-12
- Inventor: Dirk Meinhold , Heinrich Koerner , Wolfgang Dickenscheid
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/768 ; H01L23/522 ; H01L23/532

Abstract:
One or more embodiments relate to a semiconductor device that includes: a conductive layer including a sidewall; a conductive capping layer disposed over the conductive layer and laterally extending beyond the sidewall of the conductive layer by a lateral overhang; and a conductive via in electrical contact with the conductive capping layer.
Public/Granted literature
- US20150206797A1 Semiconductor Device and Method for Making Same Public/Granted day:2015-07-23
Information query
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