Invention Grant
- Patent Title: Conductive pillar structure for semiconductor substrate and method of manufacture
- Patent Title (中): 用于半导体衬底的导电柱结构及其制造方法
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Application No.: US12701868Application Date: 2010-02-08
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Publication No.: US09312230B2Publication Date: 2016-04-12
- Inventor: Chih-Hua Chen , Chen-Shien Chen , Chen-Cheng Kuo
- Applicant: Chih-Hua Chen , Chen-Shien Chen , Chen-Cheng Kuo
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Hauptman Ham, LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/31

Abstract:
A conductive pillar structure for a die includes a passivation layer having a metal contact opening over a substrate. A bond pad has a first portion inside the metal contact opening and a second portion overlying the passivation layer. The second portion of the bond pad has a first width. A buffer layer over the bond pad has a pillar contact opening with a second width to expose a portion of the bond pad. A conductive pillar has a first portion inside the pillar contact opening and a second portion over the buffer layer. The second portion of the conductive pillar has a third width. A ratio of the second width to the first width is between about 0.35 and about 0.65. A ratio of the second width to the third width is between about 0.35 and about 0.65.
Public/Granted literature
- US20110193232A1 CONDUCTIVE PILLAR STRUCTURE FOR SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURE Public/Granted day:2011-08-11
Information query
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