Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14321503Application Date: 2014-07-01
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Publication No.: US09312241B2Publication Date: 2016-04-12
- Inventor: Seiichi Aritome
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2014-0023437 20140227
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/02 ; H01L25/065 ; G11C5/02 ; G11C5/06 ; H01L23/532 ; H01L23/525

Abstract:
A semiconductor device includes an operation circuit formed on a top surface of a semiconductor substrate, a memory array formed over the operation circuit, an inner pad group formed on an intermediate layer between the operation circuit and the memory array and coupled to the operation circuit, a first outer pad group formed on a bottom surface of the semiconductor substrate, and a wiring structure passing through the semiconductor substrate, and coupling the inner pad group to the first outer pad group.
Public/Granted literature
- US20150243634A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-08-27
Information query
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