Invention Grant
US09312266B2 Memories with memory arrays extending in opposite directions from a semiconductor and their formation
有权
具有从半导体沿相反方向延伸的存储器阵列及其形成的存储器
- Patent Title: Memories with memory arrays extending in opposite directions from a semiconductor and their formation
- Patent Title (中): 具有从半导体沿相反方向延伸的存储器阵列及其形成的存储器
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Application No.: US14283291Application Date: 2014-05-21
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Publication No.: US09312266B2Publication Date: 2016-04-12
- Inventor: Sanh D. Tang , John Zahurak , Siddartha Kondoju , Haitao Liu , Nishant Sinha
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L27/112
- IPC: H01L27/112 ; H01L27/06 ; H01L27/10 ; H01L27/105 ; H01L27/115 ; H01L29/66 ; H01L29/788 ; H01L29/792 ; H01L21/8238
Abstract:
Memories and their formation are disclosed. One such memory has a first array of first memory cells extending in a first direction from a first surface of a semiconductor. A second array of second memory cells extends in a second direction, opposite to the first direction, from a second surface of the semiconductor. Both arrays may be non-volatile memory arrays. For example, one of the memory arrays may be a NAND flash memory array, while the other may be a one-time-programmable memory array.
Public/Granted literature
- US20140256098A1 MEMORIES WITH MEMORY ARRAYS EXTENDING IN OPPOSITE DIRECTIONS FROM A SEMICONDUCTOR AND THEIR FORMATION Public/Granted day:2014-09-11
Information query
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