Provision of a super-junction semiconductor device capable of reducing rises in transient on-resistance at the time of repeated switching operation. A super-junction structure is provided that has a striped parallel surface pattern, where a super-junction stripe and a MOS cell 6 stripe are parallel, and a p column Y2 over which no MOS cell 6 stripe is arranged and a p column Y1 over which the MOS cell 6 stripe is arranged are connected at an end.