Invention Grant
US09312376B2 Semiconductor device, method for fabricating the same, and memory system including the semiconductor device
有权
半导体器件及其制造方法以及包括该半导体器件的存储器系统
- Patent Title: Semiconductor device, method for fabricating the same, and memory system including the semiconductor device
- Patent Title (中): 半导体器件及其制造方法以及包括该半导体器件的存储器系统
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Application No.: US14155651Application Date: 2014-01-15
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Publication No.: US09312376B2Publication Date: 2016-04-12
- Inventor: Kook-Tae Kim , Young-Tak Kim , Ho-Sung Son , Seok-Jun Won , Ji-Hye Yi , Chul-Woong Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2013-0067855 20130613
- Main IPC: G11C11/34
- IPC: G11C11/34 ; H01L29/78 ; H01L29/66
Abstract:
Semiconductor device, method for fabricating the same and electronic devices including the semiconductor device are provided. The semiconductor device comprises an interlayer insulating layer formed on a substrate and including a trench, a gate electrode formed in the trench, a first gate spacer formed on a side wall of the gate electrode to have an L shape, a second gate spacer formed on the first gate spacer to have an L shape and having a dielectric constant lower than that of silicon nitride, and a third spacer formed on the second gate spacer.
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