Invention Grant
- Patent Title: FinFET body contact and method of making same
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Application No.: US14563720Application Date: 2014-12-08
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Publication No.: US09312384B2Publication Date: 2016-04-12
- Inventor: Ching-Hsiung Lo , Jam-Wem Lee , Wun-Jie Lin , Jen-Chou Tseng
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L27/02 ; H01L29/423
Abstract:
A semiconductor device may include body contacts on a finFET device for ESD protection. The semiconductor device comprises a semiconductor fin, a source/drain region and a body contact. The source/drain region and the body contact are in the semiconductor fin. A portion of the fin is laterally between the source/drain region and the body contact. The semiconductor fin is on a substrate.
Public/Granted literature
- US20150137264A1 FinFET Body Contact and Method of Making Same Public/Granted day:2015-05-21
Information query
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