Invention Grant
US09312401B2 Single photon avalanche diode imaging sensor for complementary metal oxide semiconductor stacked chip applications
有权
用于互补金属氧化物半导体堆叠芯片应用的单光子雪崩二极管成像传感器
- Patent Title: Single photon avalanche diode imaging sensor for complementary metal oxide semiconductor stacked chip applications
- Patent Title (中): 用于互补金属氧化物半导体堆叠芯片应用的单光子雪崩二极管成像传感器
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Application No.: US14155848Application Date: 2014-01-15
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Publication No.: US09312401B2Publication Date: 2016-04-12
- Inventor: Eric A. G. Webster
- Applicant: OMNIVISION TECHNOLOGIES, INC.
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H03K17/78 ; H01J40/14 ; H01L31/02 ; H01L31/107 ; H01L27/146

Abstract:
An imaging sensor system includes a single photon avalanche diode (SPAD) imaging array including N pixels formed in a first semiconductor layer of a first wafer. Substantially an entire thickness of the first semiconductor layer of each pixel is fully depleted such that a multiplication region included in each pixel near a front side is configured to be illuminated with photons through a back side and through the substantially entire thickness of the fully depleted first semiconductor layer. Deep n type isolation regions are disposed in the first semiconductor layer between the pixels to isolate the pixels. N digital counters are formed in a second semiconductor layer of a second wafer that is bonded to the first wafer. Each of the N digital counters is coupled to the SPAD imaging array and coupled to count output pulses generated by a respective one of the pixels.
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