Invention Grant
US09312408B2 Imager having a reduced dark current through an increased bulk doping level
有权
成像器通过增加的体积掺杂水平具有减小的暗电流
- Patent Title: Imager having a reduced dark current through an increased bulk doping level
- Patent Title (中): 成像器通过增加的体积掺杂水平具有减小的暗电流
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Application No.: US14738529Application Date: 2015-06-12
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Publication No.: US09312408B2Publication Date: 2016-04-12
- Inventor: Didier Dutartre
- Applicant: STMicroelectronics SA
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics SA
- Current Assignee: STMicroelectronics SA
- Current Assignee Address: FR Montrouge
- Agency: Seed IP Law Group PLLC
- Priority: FR1455335 20140612
- Main IPC: H01L31/0232
- IPC: H01L31/0232 ; H01L27/146 ; H01L31/0352 ; H01L31/042
Abstract:
The disclosure relates to an image sensor comprising a substrate region in a semiconductor material; an active layer in contact with the substrate region; and a photodiode array formed in the active layer. The substrate region has a doping level such that the resistivity of the substrate region is less than 6 mOhm·cm.
Public/Granted literature
- US20150364520A1 IMAGER HAVING A REDUCED DARK CURRENT THROUGH AN INCREASED BULK DOPING LEVEL Public/Granted day:2015-12-17
Information query
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