Magnetic devices and methods of manufacturing the same

Invention Grant

US09312478B2 Magnetic devices and methods of manufacturing the same 有权

Title translation: 磁性器件及其制造方法

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Patent Title: Magnetic devices and methods of manufacturing the same
Patent Title (中): 磁性器件及其制造方法
Application No.: US13589708

Application Date: 2012-08-20
Publication No.: US09312478B2

Publication Date: 2016-04-12
Inventor: Hak-sun Lee , Tokashiki Ken , Myeong-cheol Kim , Hyung-joon Kwon , Sang-min Lee , Woo-cheol Lee , Myung-hoon Jung
Applicant: Hak-sun Lee , Tokashiki Ken , Myeong-cheol Kim , Hyung-joon Kwon , Sang-min Lee , Woo-cheol Lee , Myung-hoon Jung
Applicant Address: KR Gyeonggi-do
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR Gyeonggi-do
Agency: Harness, Dickey & Pierce
Priority: KR10-2011-0130476 20111207
Main IPC: H01L21/3065
IPC: H01L21/3065 ; H01L43/12 ; B81C1/00 ; B82Y10/00 ; B82Y25/00 ; G11B5/31 ; H01L27/22

Abstract:

Magnetic devices, and methods of manufacturing the same, include a stack structure including at least one magnetic layer, etched using an etching gas including at least 70 volume percent of a hydrogen-containing gas and at least 2 volume percent of CO gas.

Abstract(Chinese):

磁性器件及其制造方法包括使用包括至少70体积％的含氢气体和至少2体积％的CO气体的蚀刻气体蚀刻的至少一个磁性层的堆叠结构。

Public/Granted literature

US20130149499A1 MAGNETIC DEVICES AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2013-06-13

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）
H01L21/3065	.......等离子腐蚀；活性离子腐蚀