Invention Grant
- Patent Title: Memory cells
- Patent Title (中): 记忆单元
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Application No.: US14323839Application Date: 2014-07-03
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Publication No.: US09312480B2Publication Date: 2016-04-12
- Inventor: Gurtej S. Sandhu , Sumeet C. Pandey
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L29/02 ; H01L47/00 ; G11C11/56 ; H01L45/00
Abstract:
Some embodiments include a memory cell having a data storage region between a pair of conductive structures. The data storage region is configured to support a transitory structure which alters resistance through the memory cell. The data storage region includes two or more portions, with one of the portions supporting a higher resistance segment of the transitory structure than another of the portions. Some embodiments include a method of forming a memory cell. First oxide and second oxide regions are formed between a pair of conductive structures. The oxide regions are configured to support a transitory structure which alters resistance through the memory cell. The oxide regions are different from one another so that one of the oxide regions supports a higher resistance segment of the transitory structure than the other.
Public/Granted literature
- US20140319444A1 Memory Cells and Methods of Making Memory Cells Public/Granted day:2014-10-30
Information query
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