Invention Grant
US09313877B2 Electronic device and noise suppression method 有权
电子设备和噪声抑制方法

  • Patent Title: Electronic device and noise suppression method
  • Patent Title (中): 电子设备和噪声抑制方法
  • Application No.: US13508974
    Application Date: 2010-10-20
  • Publication No.: US09313877B2
    Publication Date: 2016-04-12
  • Inventor: Hisashi Ishida
  • Applicant: Hisashi Ishida
  • Applicant Address: JP Tokyo
  • Assignee: NEC Corporation
  • Current Assignee: NEC Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: McGinn IP Law Group, PLLC
  • Priority: JP2009-257059 20091110; JP2010-055539 20100312; JP2010-207829 20100916
  • International Application: PCT/JP2010/006218 WO 20101020
  • International Announcement: WO2011/058702 WO 20110519
  • Main IPC: H05K1/11
  • IPC: H05K1/11 H05K1/02 H05K1/14
Electronic device and noise suppression method
Abstract:
A first interconnect substrate includes a first conductor pattern. A second interconnect substrate includes a second conductor pattern. At least a portion of the second conductor pattern is formed in a region opposite the first conductor pattern. At least either the first conductor pattern or the second conductor pattern has a repeated structure. The first conductor pattern and the second conductor pattern constitute at least a portion of an electromagnetic band gap (EBG) structure.
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