Invention Grant
- Patent Title: Symmetry based air pocket detection methods and systems
- Patent Title (中): 基于对称的气穴检测方法和系统
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Application No.: US13712592Application Date: 2012-12-12
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Publication No.: US09317912B2Publication Date: 2016-04-19
- Inventor: John F. Valley
- Applicant: MEMC Electronic Materials, Inc.
- Applicant Address: SG Singapore
- Assignee: SunEdison Semiconductor Limited
- Current Assignee: SunEdison Semiconductor Limited
- Current Assignee Address: SG Singapore
- Agency: Armstrong Teasdale LLP
- Main IPC: G01N21/00
- IPC: G01N21/00 ; G06F17/10 ; G06T7/00 ; G06T7/60 ; G01N21/59 ; G01N21/88 ; H01L21/66 ; G01N21/84

Abstract:
Methods and systems for use in detecting an air pocket in a single crystal material are described. One example method includes providing a matrix including a plurality of data units, the plurality of data units including image data related to a region of interest of the single crystal material; defining a first half and a second half of the matrix based on a first axis passing through the center of the matrix; determining, by a processor, a difference between each data unit of the first half and a corresponding data unit of the second half; calculating, by the processor, a first index value based on the determined differences; and identifying an air pocket within the single crystal material based on the first index value and a predetermined threshold.
Public/Granted literature
- US20130179094A1 Symmetry Based Air Pocket Detection Methods and Systems Public/Granted day:2013-07-11
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