Invention Grant
- Patent Title: Storage device, memory cell, and data writing method
- Patent Title (中): 存储设备，存储单元和数据写入方式
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Application No.: US14758100Application Date: 2013-12-25
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Publication No.: US09318170B2Publication Date: 2016-04-19
- Inventor: Takashi Ohsawa , Tetsuo Endoh
- Applicant: TOHOKU UNIVERSITY
- Applicant Address: JP Sendai-shi
- Assignee: Tohoku University
- Current Assignee: Tohoku University
- Current Assignee Address: JP Sendai-shi
- Agency: Greer Burns & Crain Ltd.
- Priority: JP2012-288567 20121228
- International Application: PCT/JP2013/084750 WO 20131225
- International Announcement: WO2014/104131 WO 20140703
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C7/22 ; G11C13/00 ; G11C11/16 ; G11C14/00
Abstract:
A memory cell (1) includes a first storage circuit (2) with a write time t1 and a data retention time τ1 and a second storage circuit (3) with a write time t2 and a data retention time τ2 (t1
Public/Granted literature
- US20150332745A1 STORAGE DEVICE, MEMORY CELL, AND DATA WRITING METHOD Public/Granted day:2015-11-19
Information query
