Semiconductor devices having low threading dislocations and improved light extraction and methods of making the same

Invention Grant

US09318327B2 Semiconductor devices having low threading dislocations and improved light extraction and methods of making the same 有权

Title translation: 具有低穿透位错和改进的光提取的半导体器件及其制造方法

Please log in to see more content

Patent Title: Semiconductor devices having low threading dislocations and improved light extraction and methods of making the same
Patent Title (中): 具有低穿透位错和改进的光提取的半导体器件及其制造方法
Application No.: US11563712

Application Date: 2006-11-28
Publication No.: US09318327B2

Publication Date: 2016-04-19
Inventor: Michael John Bergmann , Jason Hansen , David Todd Emerson , Kevin Ward Haberern
Applicant: Michael John Bergmann , Jason Hansen , David Todd Emerson , Kevin Ward Haberern
Applicant Address: US NC Durham
Assignee: CREE, INC.
Current Assignee: CREE, INC.
Current Assignee Address: US NC Durham
Agency: Koppel, Patrick, Heybl & Philpott
Main IPC: H01L29/06
IPC: H01L29/06 ; H01L21/02 ; H01L31/0236 ; H01L33/00

Semiconductor devices having low threading dislocations and improved light extraction and methods of making the same

Abstract:

Semiconductor device structures are provided that are suitable for use in the fabrication of electronic devices such as light emitting diodes. The semiconductor device structures include a substrate having a roughened growth surface suitable for supporting the growth of an epitaxial region thereon. The device structure can include an epitaxial region having reduced defects and/or improved radiation extraction efficiency on the roughened growth surface of the substrate. The roughened growth surface of the substrate can have an average roughness Ra of at least about 1 nanometer (nm) and an average peak to valley height Rz of at least about 10 nanometers (nm).

Abstract(Chinese):

提供了适用于制造诸如发光二极管的电子设备的半导体器件结构。半导体器件结构包括具有适于支持其上的外延区域的生长的粗糙生长表面的衬底。器件结构可以包括在衬底的粗糙化生长表面上具有减小的缺陷和/或改进的辐射提取效率的外延区域。基底的粗糙化的生长表面可以具有至少约1纳米（nm）的平均粗糙度Ra和至少约10纳米（nm）的平均峰谷高度Rz。

Public/Granted literature

US20080121910A1 Semiconductor Devices Having Low Threading Dislocations and Improved Light Extraction and Methods of Making the Same Public/Granted day:2008-05-29

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/02	.按其半导体本体的特征区分的
H01L29/06	..按其形状区分的；按各半导体区域的形状、相对尺寸或配置区分的