Invention Grant
- Patent Title: High-k dielectric liners in shallow trench isolations
- Patent Title (中): 浅沟槽隔离中的高k电介质衬垫
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Application No.: US13198018Application Date: 2011-08-04
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Publication No.: US09318370B2Publication Date: 2016-04-19
- Inventor: Szu-Ying Chen , Tzu-Jui Wang , Jen-Cheng Liu , Dun-Nian Yaung
- Applicant: Szu-Ying Chen , Tzu-Jui Wang , Jen-Cheng Liu , Dun-Nian Yaung
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L21/762 ; H01L27/146
Abstract:
A circuit structure includes a semiconductor substrate having a top surface. A dielectric material extends from the top surface into the semiconductor substrate. A high-k dielectric layer is formed of a high-k dielectric material, wherein the high-k dielectric layer comprises a first portion on a sidewall of the dielectric material, and a second portion underlying the dielectric material.
Public/Granted literature
- US20130032912A1 High-k Dielectric Liners in Shallow Trench Isolations Public/Granted day:2013-02-07
Information query
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