There is provided a leadless package type power semiconductor module. According to an exemplary embodiment of the present disclosure, the leadless package type power semiconductor module includes: connection terminals of a surface mounting type (SMT) formed at edges at which respective sides of four surfaces meet each other; a first mounting area connected to the connection terminals through a bridge to be disposed at a central portion thereof and mounted with power devices or control ICs electrically connected to the power devices to control the power devices; and second mounting areas formed between the connection terminals and mounted with the power devices or the control ICs, wherein the first mounting area is disposed at a different height from the second mounting area through the bridge to generate a phase difference from the second mounting area. Therefore, it is possible to implement a high-integration, high-performance, and small power semiconductor module by applying a three-dimensional structure deviating from a one-dimensional flat structure.