Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14249561Application Date: 2014-04-10
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Publication No.: US09318433B2Publication Date: 2016-04-19
- Inventor: Yoshiaki Toyoda
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-shi
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-shi
- Agency: Rossi, Kimms & McDowell LLP
- Priority: JP2013-085699 20130416
- Main IPC: H01H37/76
- IPC: H01H37/76 ; H01H85/00 ; H01L23/525

Abstract:
A low cost, small scale semiconductor device including a trimming circuit having a fuse resistor is disclosed. By a trimming circuit being configured of a MOSFET, a protection circuit, and a fuse resistor, it is possible to carry out a change from an open circuit state to a short circuit state by fusing the fuse resistor. Also, by the protection circuit and fuse resistor configuring the trimming circuit being formed in a two layer structure, it is possible to reduce the size of the trimming circuit, and thus it is possible to provide a low cost, small scale semiconductor device having a trimming circuit that occupies a small area.
Public/Granted literature
- US20140306750A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-10-16
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