Invention Grant
- Patent Title: Semiconductor device and fabricating method thereof
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US14610046Application Date: 2015-01-30
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Publication No.: US09318478B1Publication Date: 2016-04-19
- Inventor: Deok-Han Bae , Dong-Kwon Kim , Jong-Hyuk Kim , Yoon-Moon Park
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L27/02

Abstract:
A semiconductor device includes a first dummy gate having a first width, a second dummy gate adjacent to the first dummy gate in a lengthwise direction and having a second width, and a first bridge connecting the first dummy gate and the second dummy gate to each other. The first width and the second width are smaller than a minimum processing line width.
Information query
IPC分类: