Invention Grant
US09318478B1 Semiconductor device and fabricating method thereof 有权
半导体器件及其制造方法

Semiconductor device and fabricating method thereof
Abstract:
A semiconductor device includes a first dummy gate having a first width, a second dummy gate adjacent to the first dummy gate in a lengthwise direction and having a second width, and a first bridge connecting the first dummy gate and the second dummy gate to each other. The first width and the second width are smaller than a minimum processing line width.
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