Invention Grant
- Patent Title: High performance power cell for RF power amplifier
- Patent Title (中): 用于射频功率放大器的高性能功率单元
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Application No.: US13937542Application Date: 2013-07-09
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Publication No.: US09318487B2Publication Date: 2016-04-19
- Inventor: Jun-De Jin , Tzu-Jin Yeh , Chewn-Pu Jou
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H03F1/22 ; H01L21/8238 ; H01L27/095 ; H03F3/213 ; H01L27/092
Abstract:
A power cell designed for an RF power amplifier comprises an enhancement MOSFET formed in an P-Well in an P-Substrate and a depletion or Schottky MOSFET formed in an N-Well in the same P-Substrate with a horizontal or a vertical channel between the source, drain, and gate electrodes of the depletion or Schottky MOSFET. The source node of the enhancement MOSFET and source node of the depletion or Schottky MOSFET are connected together to form the power cell.
Public/Granted literature
- US20150014786A1 HIGH PERFORMANCE POWER CELL FOR RF POWER AMPLIFIER Public/Granted day:2015-01-15
Information query
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