Invention Grant
US09318491B2 Semiconductor fin devices and method of fabricating the semiconductor fin devices
有权
半导体鳍片器件及半导体鳍片器件的制造方法
- Patent Title: Semiconductor fin devices and method of fabricating the semiconductor fin devices
- Patent Title (中): 半导体鳍片器件及半导体鳍片器件的制造方法
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Application No.: US14547190Application Date: 2014-11-19
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Publication No.: US09318491B2Publication Date: 2016-04-19
- Inventor: Mirco Cantoro , Taeyong Kwon , Sangsu Kim , Jae-Hwan Lee
- Applicant: Mirco Cantoro , Taeyong Kwon , Sangsu Kim , Jae-Hwan Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2014-0024075 20140228
- Main IPC: H01L27/01
- IPC: H01L27/01 ; H01L27/12 ; H01L31/0392 ; H01L27/092 ; H01L27/088 ; H01L29/36 ; H01L29/16 ; H01L29/20
Abstract:
A semiconductor device includes a substrate, an insulating layer disposed on the substrate and having a trench exposing a surface portion of the substrate, and a channel-forming structure comprising crystalline semiconductor material. The channel-forming structure has a lower portion located in the trench and fins extending upright on the lower portion, where the fins are spaced from each other and are each narrower than an opening of the trench, and the lower portion of the channel forming structure has a higher crystal defect density than the fins of the channel forming structure.
Public/Granted literature
- US20150249087A1 SEMICONDUCTOR FIN DEVICES AND METHOD OF FARICATING THE SEMICONDUCTOR FIN DEVICES Public/Granted day:2015-09-03
Information query
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