Invention Grant
- Patent Title: Lithography-friendly local read circuit for NAND flash memory devices and manufacturing method thereof
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Application No.: US14699831Application Date: 2015-04-29
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Publication No.: US09318499B2Publication Date: 2016-04-19
- Inventor: Hyoung Seub Rhie
- Applicant: Conversant Intellectual Property Management Inc.
- Applicant Address: CA Ottawa
- Assignee: Conversant Intellectual Property Management Inc.
- Current Assignee: Conversant Intellectual Property Management Inc.
- Current Assignee Address: CA Ottawa
- Agent Daniel Hammond
- Main IPC: G11C16/04
- IPC: G11C16/04 ; H01L27/115 ; G11C16/26 ; G11C16/10 ; G11C7/18 ; G11C16/08 ; G11C16/24 ; H01L23/528 ; H01L27/02
Abstract:
A flash memory device comprising a local sensing circuitry is provided in a hierarchical structure with local and global bit lines. The local sensing circuitry comprise read and pass circuits configured to sense and amplify read currents during read operations, wherein the amplified read signals may be passed to a global circuit via the local and global bit lines.
Public/Granted literature
- US20150303210A1 Lithography-friendly Local Read Circuit for NAND Flash Memory Devices and Manufacturing Method Thereof Public/Granted day:2015-10-22
Information query
