Invention Grant
- Patent Title: Thin film transistor, method of manufacturing the same, and electronic apparatus
- Patent Title (中): 薄膜晶体管，其制造方法以及电子设备
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Application No.: US14321225Application Date: 2014-07-01
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Publication No.: US09318611B2Publication Date: 2016-04-19
- Inventor: Koichi Amari
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: SONY CORPORATION
- Current Assignee: SONY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Hazuki International, LLC
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L29/786 ; H01L29/06 ; H01L29/16 ; H01L29/66 ; H01L51/00 ; H01L51/05 ; H01L29/417
Abstract:
A thin film transistor includes: a gate electrode and a pair of source and drain electrodes; and a semiconductor layer having a channel formed therein, and having a pair of connection sections connected to the pair of source and drain electrodes, respectively, wherein one or both of opposed surfaces of the pair of connection sections is a non-flat surface.
Public/Granted literature
- US20150021572A1 THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS Public/Granted day:2015-01-22
Information query
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