Invention Grant
- Patent Title: Process for producing trichlorosilane
- Patent Title (中): 制备三氯硅烷的方法
-
Application No.: US13576690Application Date: 2011-02-09
-
Publication No.: US09321653B2Publication Date: 2016-04-26
- Inventor: Ayao Akiyoshi , Tadashi Aimoto
- Applicant: Ayao Akiyoshi , Tadashi Aimoto
- Applicant Address: JP Shunan-Shi
- Assignee: TOKUYAMA CORPORATION
- Current Assignee: TOKUYAMA CORPORATION
- Current Assignee Address: JP Shunan-Shi
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2010-033686 20100218
- International Application: PCT/JP2011/052683 WO 20110209
- International Announcement: WO2011/102265 WO 20110825
- Main IPC: C01B33/08
- IPC: C01B33/08 ; C01B33/107

Abstract:
[Problems] To provide a process for efficiently producing trichlorosilane on an industrial scale by efficiently reusing the waste gas of after trichlorosilane is separated by condensation from the gas that is formed by the reaction of metallic silicon with hydrogen chloride.[Means for Solution] A process for producing trichlorosilane, including, independently from each other, a first production process for forming trichlorosilane by reacting metallic silicon with hydrogen chloride and a second production process for forming trichlorosilane by reacting metallic silicon with tetrachlorosilane and hydrogen; whereintrichlorosilane and other chlorosilane compounds are separated by condensation from trichlorosilane-containing gases formed by reaction in the first production process, and the waste gas from which trichlorosilane and other chlorosilane compounds have been separated by condensation is fed as a hydrogen source to the second production process.
Public/Granted literature
- US20120301385A1 PROCESS FOR PRODUCING TRICHLOROSILANE Public/Granted day:2012-11-29
Information query