Invention Grant
- Patent Title: Vanadium doped SiC single crystals and method thereof
- Patent Title (中): 钒掺杂SiC单晶及其制备方法
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Application No.: US14064604Application Date: 2013-10-28
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Publication No.: US09322110B2Publication Date: 2016-04-26
- Inventor: Ilya Zwieback , Thomas E. Anderson , Avinash K. Gupta , Michael C. Nolan , Bryan K. Brouhard , Gary E. Ruland
- Applicant: II-VI Incorporated
- Applicant Address: US PA Saxonburg
- Assignee: II-VI Incorporated
- Current Assignee: II-VI Incorporated
- Current Assignee Address: US PA Saxonburg
- Agency: The Webb Law Firm
- Main IPC: C30B23/02
- IPC: C30B23/02 ; C30B29/36 ; C30B23/00
Abstract:
A sublimation grown SiC single crystal includes vanadium dopant incorporated into the SiC single crystal structure via introduction of a gaseous vanadium compound into a growth environment of the SiC single crystal during growth of the SiC single crystal.
Public/Granted literature
- US20140234194A1 Vanadium Doped SiC Single Crystals and Method Thereof Public/Granted day:2014-08-21
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